Samsung industry leader in electronic field of technology announced producing the industry’s most advanced 8-gigabit (Gb) DDR4 memory and 32-gigabyte (GB) module designed for enterprise servers Both manufactured with the new 20nm manufacturing process and this offers you high performance, energy and density. 16GB and 32GB capacity memory is now very common, and only 64GB and 128GB is very rare, but it is for Samsung, it seems not difficult. From a technical perspective, the second product based on the first product to build.
8Gb DDR4 DRAM is basically equivalent to 1GB of storage space, through the 20nm manufacturing process to build, to ensure that the volume will be higher density is small. Samsung’s 4Gb chip originally able to build up to 64GB capacity, content modules, but the Samsung also introduced a 3D TSV silicon packaging technology, the use of the new 8Gb DDR4 DRAM can also be produced to 128GB of memory and it also enhance the error correction features which it uses 1.2v voltage.
Samsung vice president of memory marketing Jeeho Beak said the new 20nm 8Gb DDR4 memory combines high performance, high density and high energy efficiency features which will increase memory reliability in the design of enterprise servers. However, the memory chip is currently only for enterprise customers to build, so soon after we will see some vendors who will approach the next batch of orders, for create your motherboard or memory PCB board.
Transmission speed of the new 32GB DDR4 memory module reaches 2400Mbps, compared to the previous generation DDR3 products 29% faster on (1866Mpbs) performance. While ordinary users typically use a 1600Mbps speed DDR3 memory, but rarely seen in enterprise applications speeds below 1866Mpbs memory. The new DDR4 significantly reduces the power demand, only 1.2v voltage, speed and more power for the enterprise to build a large data center or cloud storage is very favorable.
Samsung has two new products are currently available for sale, the price is only available to business customers based on order size. Of course, Samsung’s 20nm 4Gb DDR3-based memory and a PC with the process of mobile device memory 6Gb LPDDR3. Not surprisingly, then, after a period of time will be officially launched by Samsung 3D TSV silicon via technology to create a capacity of up to 128GB of DDR4 memory.
